Invention Grant
- Patent Title: High throw-count RF switch
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Application No.: US16989462Application Date: 2020-08-10
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Publication No.: US11190183B2Publication Date: 2021-11-30
- Inventor: Eric S. Shapiro , Payman Shanjani
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus & McFarland LLP
- Agent John Land, Esq.
- Main IPC: H03K17/693
- IPC: H03K17/693 ; H03K17/62 ; H04B1/04 ; H04B1/48 ; H03K17/76 ; H03K17/06

Abstract:
A high throw-count multiple-pole FET-based RF switch architecture that provides good RF performance in terms of insertion loss, return loss, isolation, linearity, and power handling. A common port RFC is coupled along a common path to multiple ports RFn. Embodiments introduce additional common RF path branch isolation switches which are controlled by state dependent logic. The branch isolation switches help to isolate the unused branch ports RFn and the unused portion of the common path from the active portion of the common path, and thereby reduce the reactive load attributable to such branches that degrades RF performance of the ports RFn “closer” to the common port RFC. The branch isolation switches can also be used to reconfigure the switch architecture for a multiplex function as well as separate switch path banks for re-configurability of purpose, tuning, or varying switch throw counts and packaging options.
Public/Granted literature
- US20210028783A1 High Throw-Count RF Switch Public/Granted day:2021-01-28
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