Invention Grant
- Patent Title: Template, template manufacturing method, and semiconductor device manufacturing method
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Application No.: US16116402Application Date: 2018-08-29
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Publication No.: US11192282B2Publication Date: 2021-12-07
- Inventor: Kei Kobayashi , Anupam Mitra , Seiji Morita , Hirokazu Kato
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JPJP2018-033833 20180227
- Main IPC: B29C33/42
- IPC: B29C33/42 ; B29C35/08 ; G03F7/00 ; B29C37/00 ; H01L21/027 ; B29C43/02 ; B29C43/38

Abstract:
According to one embodiment, a template for imprint patterning processes comprises a template substrate having a first surface and a pedestal on the first surface of the template substrate, the pedestal having a second surface spaced from the first surface in a first direction perpendicular to the first surface. A pattern is disposed on the second surface. The pedestal has a sidewall between the first surface and the second surface that is at an angle of less than 90° to the second surface.
Public/Granted literature
- US20190263024A1 TEMPLATE, TEMPLATE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2019-08-29
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