Invention Grant
- Patent Title: Semiconductor memory device, and memory system having the same
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Application No.: US16668090Application Date: 2019-10-30
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Publication No.: US11194653B2Publication Date: 2021-12-07
- Inventor: Yesin Ryu , Sanguhn Cha , Hyungi Kim , Hoon Shin
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2019-0038816 20190403
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C29/42

Abstract:
A semiconductor memory device and a memory system including the same are provided. The semiconductor memory device includes a memory cell array including memory blocks, a local parity memory block, and a register block. The memory blocks respectively store pieces of partial local data in response to a plurality of column selection signals, or a first partial global parity in response to a global parity column selection signal. The local parity memory block stores local parities of local data in response to the plurality of column selection signals, or a second partial global parity in response to the global parity column selection signal. The register block generates a global parity including the first partial global parities and the second partial global parity. Each piece of local data includes the partial local data, and the global parity is a parity of the pieces of local data and the local parities.
Public/Granted literature
- US20200319960A1 SEMICONDUCTOR MEMORY DEVICE, AND MEMORY SYSTEM HAVING THE SAME Public/Granted day:2020-10-08
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