Invention Grant
- Patent Title: Multi-die memory device
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Application No.: US17135112Application Date: 2020-12-28
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Publication No.: US11195572B2Publication Date: 2021-12-07
- Inventor: Scott C. Best , Ming Li
- Applicant: Rambus Inc.
- Applicant Address: US CA San Jose
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA San Jose
- Agency: Peninsula Patent Group
- Agent Lance Kreisman
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C11/4093 ; G11C11/4096 ; G11C5/04 ; H01L25/065 ; H01L25/10 ; H01L25/18 ; H01L23/48 ; G11C11/406 ; H01L23/00

Abstract:
A memory is disclosed that includes a logic die having first and second memory interface circuits. A first memory die is stacked with the logic die, and includes first and second memory arrays. The first memory array couples to the first memory interface circuit. The second memory array couples to the second interface circuit. A second memory die is stacked with the logic die and the first memory die. The second memory die includes third and fourth memory arrays. The third memory array couples to the first memory interface circuit. The fourth memory array couples to the second memory interface circuit. Accesses to the first and third memory arrays are carried out independently from accesses to the second and fourth memory arrays.
Public/Granted literature
- US20210193215A1 MULTI-DIE MEMORY DEVICE Public/Granted day:2021-06-24
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