Invention Grant
- Patent Title: Write operation circuit, semiconductor memory, and write operation method
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Application No.: US17313001Application Date: 2021-05-06
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Publication No.: US11195573B2Publication Date: 2021-12-07
- Inventor: Liang Zhang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN201911021460.1 20191025
- Main IPC: G11C11/4093
- IPC: G11C11/4093 ; G11C11/4096 ; G11C7/10 ; H03M9/00 ; G06F13/16

Abstract:
Embodiments provide one write operation circuit, which includes: a serial-to-parallel conversion circuit that performs serial-to-parallel conversion on a first DBI data of a DBI port to generate a second DBI data for transfer by a DBI signal line, and that generates an input data of a data buffer module depending on the second DBI data; a data buffer module that determines whether to flip a global bus depending on the input data of the data buffer module; the DBI decoding module that decodes a global bus data according to the second DBI data, and writes the decoded data into a memory bank, where decoding includes determining whether to flip the global bus data; and a precharge module that is coupled to a precharge signal line and that sets the initial state of the global bus to high.
Public/Granted literature
- US20210272621A1 WRITE OPERATION CIRCUIT, SEMICONDUCTOR MEMORY, AND WRITE OPERATION METHOD Public/Granted day:2021-09-02
Information query
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