A non-volatile memory device includes: a memory group of a plurality of variable resistance memory cells in which digital data is recorded according to a magnitude of a resistance value, the memory group including at least one data cell and at least one dummy cell which are associated with each other; and a read circuit which performs, in parallel, a read operation on each of the plurality of memory cells included in the memory group. Dummy data, for reducing a correlation between a side-channel leakage generated when the read operation is performed by the read circuit and information data recorded in the at least one data cell, is recorded in the at least one dummy cell.