Invention Grant
- Patent Title: Plasma control apparatus
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Application No.: US15760298Application Date: 2017-01-20
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Publication No.: US11195697B2Publication Date: 2021-12-07
- Inventor: Toshihiro Hayami , Ryosuke Fujii
- Applicant: SPP Technologies Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: SPP Technologies Co., Ltd.
- Current Assignee: SPP Technologies Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Clark & Brody LP
- Priority: JPJP2016-011012 20160122
- International Application: PCT/JP2017/001942 WO 20170120
- International Announcement: WO2017/126662 WO 20170727
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/3065 ; H05H1/46 ; H01L21/67 ; H03H7/38

Abstract:
A plasma control apparatus includes a power source unit, a resonance producing unit, and a voltmeter. The resonance producing unit includes an LC circuit formed by a coil L1 and a capacitor C1 connected to each other, and a sensor S2 configured to detect a phase difference between current flowing in and voltage applied to the LC circuit, and the capacitor C1 of the LC circuit has a capacitance larger than an expected capacitance of the plasma P. The power source unit 1 configured to control the magnitude of radio-frequency power to be supplied in such a manner as to bring the voltage measured with the voltmeter 5 close to a set voltage as a target, and controls the frequency of the radio-frequency power to be supplied in such a manner as to minimize the phase difference detected with the sensor S2.
Public/Granted literature
- US20180315581A1 PLASMA CONTROL APPARATUS Public/Granted day:2018-11-01
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