Invention Grant
- Patent Title: Semiconductor device including stressed source/drain, method of manufacturing the same and electronic device including the same
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Application No.: US16338169Application Date: 2017-07-31
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Publication No.: US11195765B2Publication Date: 2021-12-07
- Inventor: Huilong Zhu
- Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Beijing
- Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee Address: CN Beijing
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: CN201610872541.2 20160930,CN201710530297.6 20170630
- International Application: PCT/CN2017/095130 WO 20170731
- International Announcement: WO2018/059108 WO 20180405
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/8234 ; H01L29/06 ; H01L29/267 ; H01L29/417 ; H01L29/66 ; H01L29/775 ; H01L29/786 ; H01L29/10 ; H01L29/78 ; H01L21/02 ; H01L21/3065 ; H01L29/04 ; H01L29/165 ; H01L29/423 ; B82Y10/00 ; G05B23/02 ; G06T19/00 ; H04N5/232 ; H04N7/18 ; H01L21/225 ; H01L21/324 ; H01L29/08 ; H01L29/15 ; H01L29/205 ; H01L29/45 ; H01L29/778 ; H01L21/308 ; H01L21/822 ; H01L27/092 ; H04N13/332 ; H04N13/111 ; H04N13/366 ; H04N13/398 ; G06F3/0481 ; G06F3/0482 ; G06K9/00 ; H04N5/247 ; H01L21/3105
Abstract:
There are provided a semiconductor device, a method of manufacturing the same, and an electronic device including the device. According to an embodiment, the semiconductor device may include a substrate, and a first device and a second device formed on the substrate. Each of the first device and the second device includes a first source/drain layer, a channel layer and a second source/drain layer stacked on the substrate in sequence, and also a gate stack surrounding a periphery of the channel layer. The channel layer of the first device and the channel layer of the second device are substantially co-planar with each other, and the respective second source/drain layers of the first device and the second device are stressed differently.
Public/Granted literature
- US20190279980A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE INCLUDING THE DEVICE Public/Granted day:2019-09-12
Information query
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