A method for manufacturing a combined semiconductor device. The method includes providing a semiconductor substrate, providing a protective layer or a protective layer stack in a non-CMOS area of the semiconductor substrate, wherein the non-CMOS area is portion of the semiconductor substrate reserved for a non-CMOS device, at least partially manufacturing a CMOS device in a CMOS area of the semiconductor substrate, the non-CMOS area and the CMOS area being different from each other, removing the protective layer or the protective layer stack, to expose the semiconductor substrate in the non-CMOS area, and manufacturing a non-CMOS device in the non-CMOS area of the semiconductor substrate.