Invention Grant
- Patent Title: Semiconductor device, high-frequency power amplifier, and method of manufacturing semiconductor device
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Application No.: US16629669Application Date: 2017-09-28
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Publication No.: US11195807B2Publication Date: 2021-12-07
- Inventor: Tomoyuki Asada , Yoichi Nogami , Kenichi Horiguchi , Shigeo Yamabe , Satoshi Miho , Kenji Mukai
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2017/035233 WO 20170928
- International Announcement: WO2019/064431 WO 20190404
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H01L23/367 ; H01L23/00 ; H03F1/30 ; H03F3/19

Abstract:
Reduction in impedance in a lead connected to a semiconductor element is achieved while achieving anchor effect. The semiconductor device includes a heatsink, a semiconductor element, a lead disposed on an upper side of the heatsink, and a molding material formed to cover the lead, the heatsink, and the semiconductor element. Formed on an edge portion of a lower surface in a position, in the heatsink, overlapping with the lead in a plan view is a first convex portion protruding more than an edge portion of an upper surface in the position, and formed on an edge portion of an upper surface in a position, in the heatsink, which does not overlap with the lead in a plan view is a second convex portion protruding more than an edge portion of a lower surface in the position.
Public/Granted literature
- US20200227363A1 SEMICONDUCTOR DEVICE, HIGH-FREQUENCY POWER AMPLIFIER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-07-16
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