Invention Grant
- Patent Title: Bonding structure and method of forming same
-
Application No.: US16549004Application Date: 2019-08-23
-
Publication No.: US11195810B2Publication Date: 2021-12-07
- Inventor: Hsien-Wei Chen , Jie Chen , Ming-Fa Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/48 ; H01L23/532 ; H01L21/768 ; H01L21/18 ; H01L33/00 ; H01L23/373

Abstract:
A device includes an interconnect structure over a substrate, multiple first conductive pads over and connected to the interconnect structure, a planarization stop layer extending over the sidewalls and top surfaces of the first conductive pads of the multiple first conductive pads, a surface dielectric layer extending over the planarization stop layer, and multiple first bonding pads within the surface dielectric layer and connected to the multiple first conductive pads.
Public/Granted literature
- US20210057363A1 BONDING STRUCTURE AND METHOD OF FORMING SAME Public/Granted day:2021-02-25
Information query
IPC分类: