Invention Grant
- Patent Title: Integrated circuit and method for manufacturing the same
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Application No.: US16745214Application Date: 2020-01-16
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Publication No.: US11195841B2Publication Date: 2021-12-07
- Inventor: Chi-Chung Jen , Yu-Chu Lin , Cheng-Hsiang Wang , Yi-Ling Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L27/11519
- IPC: H01L27/11519 ; H01L29/423 ; H01L21/28
Abstract:
A method for manufacturing an integrated circuit is provided. The method includes depositing a floating gate electrode film over a semiconductor substrate; patterning the floating gate electrode film into at least one floating gate electrode having at least one opening therein; depositing a control gate electrode film over the semiconductor substrate to overfill the at least one opening of the floating gate electrode; and patterning the control gate electrode film into at least one control gate electrode over the floating gate electrode.
Public/Granted literature
- US20210225855A1 INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2021-07-22
Information query
IPC分类:
