Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US16881685Application Date: 2020-05-22
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Publication No.: US11195936B2Publication Date: 2021-12-07
- Inventor: Kuo-Cheng Ching , Shi-Ning Ju , Chih-Hao Wang , Ying-Keung Leung
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/311 ; H01L21/8238 ; H01L27/092 ; H01L21/02 ; H01L29/51
Abstract:
A semiconductor structure includes a substrate, a fin, a bottom capping structure and a top capping structure. The fin disposed on the substrate, the fin has a lower portion and an upper portion extending upwards from the lower portion. The bottom capping structure covers a sidewall of the lower portion of the fin. The top capping structure covers a sidewall of the upper portion of the fin.
Public/Granted literature
- US20200287018A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2020-09-10
Information query
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