A high responsivity, high bandwidth photodiode is disclosed which includes at least one substrate, at least one n+ type layer may be formed on the at substrate and configured to receive at least a portion of an incident optical signal from the substrate, at least one supplemental layer formed on the n+ type layer and configured to receive at least a portion of the incident optical signal from the n+ type layer, at least absorbing layer formed on the supplemental layer and configured to receive at least a portion of the incident optical signal from the supplemental layer, at least one angled facet formed on the substrate and configured to direct at least a portion of the incident optical signal to at least one of the n+ type layer, the supplemental layer, and the absorbing layer at angle of incidence from 15° to 89° from a normal angle of incidence.