Invention Grant
- Patent Title: Piezoelectric film, piezoelectric element, and method for manufacturing piezoelectric film
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Application No.: US16199296Application Date: 2018-11-26
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Publication No.: US11195983B2Publication Date: 2021-12-07
- Inventor: Daigo Sawaki , Naoki Murakami
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2016-148051 20160728
- Main IPC: H01L41/18
- IPC: H01L41/18 ; H01L41/08 ; H01L41/316 ; C23C14/08 ; C01G33/00 ; H01L41/09 ; H01L41/187 ; H01L41/047 ; H01L41/314
Abstract:
Provided is a piezoelectric film that has a perovskite structure preferentially oriented to a (100) plane and that comprises a composite oxide represented by the following compositional formula: Pba[(ZrxTi1-x)1-yNby]bO3 wherein 0
Public/Granted literature
- US20190097121A1 PIEZOELECTRIC FILM, PIEZOELECTRIC ELEMENT, AND METHOD FOR MANUFACTURING PIEZOELECTRIC FILM Public/Granted day:2019-03-28
Information query
IPC分类:
