A magnetic random access memory assisted non-volatile Hall effect device includes a spin orbit torque layer disposed over a substrate, and a magnetic layer disposed over the spin orbit torque layer. A metal oxide layer disposed over the magnetic layer. Portions of the spin orbit torque layer extend outward from the magnetic layer and the metal oxide layer on opposing sides of a first direction and opposing sides of a second direction in plan view, and the second direction is perpendicular to the first direction.