Invention Grant
- Patent Title: Variable resistance memory devices including self-heating layer and methods of manufacturing the same
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Application No.: US16826778Application Date: 2020-03-23
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Publication No.: US11195997B2Publication Date: 2021-12-07
- Inventor: Junhwan Paik , Yongjin Park , Jinwook Yang , Gyuhwan Oh , Jiyoon Chung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2019-0088777 20190723
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L45/00 ; H01L23/528 ; H01L27/24
Abstract:
A variable resistance memory device includes a first conductive line structure having an adiabatic line therein on a substrate, a variable resistance pattern contacting an upper surface of the first conductive line structure, a low resistance pattern contacting an upper surface of the variable resistance pattern, a selection structure on the low resistance pattern, and a second conductive line on the selection structure.
Public/Granted literature
- US20210028357A1 VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2021-01-28
Information query
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