Invention Grant
- Patent Title: Low forming voltage non-volatile memory (NVM)
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Application No.: US16671901Application Date: 2019-11-01
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Publication No.: US11196000B2Publication Date: 2021-12-07
- Inventor: Youngseok Kim , Injo Ok , Alexander Reznicek , Soon-Cheon Seo
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L45/00

Abstract:
A low forming voltage NVM device is provided by forming a pair of sacrificial conductive pads on an interconnect dielectric material layer that embeds a pair of second electrically conductive structures and a patterned material stack. One of the sacrificial conductive pads has a first area and contacts a surface of one of the second electrically conductive structures that contacts a surface of an underlying first electrically conductive structure, and the other of the sacrificial conductive pads has a second area, different from the first area, and contacts a surface of another of the second electrically conductive structures that contacts a surface of a top electrode of the patterned material stack. A plasma treatment is performed to induce an antenna effect and to convert a dielectric switching material of the patterned material stack into a conductive filament. After plasma treatment, the pair of sacrificial conductive pads is removed.
Public/Granted literature
- US20210135107A1 LOW FORMING VOLTAGE NON-VOLATILE MEMORY (NVM) Public/Granted day:2021-05-06
Information query
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