Invention Grant
- Patent Title: Dark current reduction for image sensor having electronic global shutter and image storage capacitors
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Application No.: US16506693Application Date: 2019-07-09
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Publication No.: US11196950B2Publication Date: 2021-12-07
- Inventor: Keiji Mabuchi , Sohei Manabe , Lindsay Grant
- Applicant: OmniVision Technologies, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Lathrop GPM LLP
- Main IPC: H04N5/357
- IPC: H04N5/357 ; H04N5/374 ; H04N5/369 ; H04N5/361 ; H04N5/3745 ; H04N5/378

Abstract:
An image sensor has an array of pixels, each pixel having an associated shutter transistor coupled to transfer a charge dependent on light exposure of the pixel onto an image storage capacitor, the image-storage capacitors being configured to be read into an analog to digital converter. The shutter transistors are P-type transistors in N-wells, the wells held at an analog power voltage to reduce sensitivity of pixels to dark current; in an alternative embodiment the shutter transistors are N-type transistors in P-wells, the wells held at an analog ground voltage.
Public/Granted literature
- US20210014440A1 DARK CURRENT REDUCTION FOR IMAGE SENSOR HAVING ELECTRONIC GLOBAL SHUTTER AND IMAGE STORAGE CAPACITORS Public/Granted day:2021-01-14
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