Invention Grant
- Patent Title: Capacitor having through hole structure and manufacturing method therefor
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Application No.: US16661244Application Date: 2019-10-23
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Publication No.: US11197372B2Publication Date: 2021-12-07
- Inventor: Jong Min Yook , Jun Chul Kim , Dong Su Kim
- Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
- Applicant Address: KR Seongnam-si
- Assignee: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
- Current Assignee: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
- Current Assignee Address: KR Seongnam-si
- Agency: Hauptman Ham, LLP
- Priority: KR10-2018-0128350 20181025
- Main IPC: H05K1/16
- IPC: H05K1/16 ; H01G4/35 ; H01G4/38

Abstract:
An embodiment of the present invention provides a capacitor having a through hole structure and a manufacturing method therefor. The capacitor having the through hole structure includes: a baseboard having a through hole penetrating from an upper surface of the baseboard to a lower surface thereof; a first conductive layer formed on an internal surface of the through hole, and the upper surface of the baseboard, the lower surface thereof, or both the upper and lower surfaces thereof; a first dielectric layer formed on the first conductive layer; and a second conductive layer formed on the first dielectric layer.
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