Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16526452Application Date: 2019-07-30
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Publication No.: US11200165B2Publication Date: 2021-12-14
- Inventor: Sang Soo Ko , Jae Gon Kim , Kyoung Young Kim , Sang Hyuck Ha
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2018-0153279 20181203
- Main IPC: G06F12/0802
- IPC: G06F12/0802 ; G06F13/42 ; G06F3/06 ; G06N3/08

Abstract:
A semiconductor device is provided. The semiconductor device comprises a first memory unit including a first memory area, and a first logic area electrically connected to the first memory area, the first logic area including a cache memory and an interface port. The first memory unit executes a data transmission and reception operation with a memory unit adjacent to the first memory unit via the first interface port and the cache memory.
Public/Granted literature
- US20200174928A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-06-04
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