Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US16561391Application Date: 2019-09-05
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Publication No.: US11200951B2Publication Date: 2021-12-14
- Inventor: Rieko Funatsuki , Takahiko Sasaki , Tomonori Kurosawa
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JPJP2018-231802 20181211
- Main IPC: G11C7/08
- IPC: G11C7/08 ; G11C16/10 ; G11C7/10 ; G11C16/34 ; G11C16/08 ; G11C16/24 ; G11C16/26 ; G11C16/30

Abstract:
According to one embodiment, a semiconductor memory device includes a plurality of memory cells; a first circuit configured to convert first data into second data relating to an order of thresholds of the memory cells; and a second circuit configured to perform a write operation on the memory cells based on the second data.
Public/Granted literature
- US20200185035A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2020-06-11
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