Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16961779Application Date: 2018-12-03
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Publication No.: US11201130B2Publication Date: 2021-12-14
- Inventor: Hirotaka Oomori , Takashi Tsuno
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: IPUSA, PLLC
- Priority: JPJP2018-010262 20180125
- International Application: PCT/JP2018/044399 WO 20181203
- International Announcement: WO2019/146260 WO 20190801
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A semiconductor device includes a base plate; a metal plate above the base plate; a bonding material between the base plate and metal plate, bonding the metal plate to the base plate; an insulating plate on the metal plate; a circuit member on the insulating plate; a semiconductor element mounted on the circuit member; and a sealing material to seal a space on the base plate. The metal plate includes a bottom surface area along a periphery, exposed from the bonding material. The base plate includes a groove-shaped first recess formed along the periphery of the metal plate and faces the bottom surface area. The base plate also includes a groove-shaped second recess that is spaced apart from the first recess and that is formed on the inner side relative to the first recess. The bonding material is disposed in at least a part of the second recess.
Public/Granted literature
- US20210066235A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-03-04
Information query
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