CMOS image sensor packaging structure and fabrication method thereof, and camera device
Abstract:
A CMOS image sensor packaging structure and a fabrication method thereof, and a camera device are provided. The packaging structure includes a pixel circuit substrate including a photosensitive region and a readout circuit region. A pixel array is disposed in the photosensitive region, and the readout circuit including a circuit interconnection terminal is disposed in the readout circuit region. The pixel circuit substrate includes a first surface and a second surface that are oppositely disposed. The packaging structure also includes a bonding layer disposed on the first surface. Moreover, the packaging structure includes a signal processing chip disposed above the first surface through the bonding layer. The signal processing chip includes a chip interconnection terminal. In addition, the packaging structure includes an interconnection structure electrically connected to the chip interconnection terminal and the circuit interconnection terminal. Further, the packaging structure includes a redistribution layer disposed on the second surface.
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