Invention Grant
- Patent Title: CMOS image sensor packaging structure and fabrication method thereof, and camera device
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Application No.: US16671565Application Date: 2019-11-01
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Publication No.: US11201187B2Publication Date: 2021-12-14
- Inventor: Yanghui Xiang
- Applicant: Ningbo Semiconductor International Corporation
- Applicant Address: CN Ningbo
- Assignee: Ningbo Semiconductor International Corporation
- Current Assignee: Ningbo Semiconductor International Corporation
- Current Assignee Address: CN Ningbo
- Agency: Anova Law Group, PLLC
- Priority: CN201910147029.5 20190227
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/378

Abstract:
A CMOS image sensor packaging structure and a fabrication method thereof, and a camera device are provided. The packaging structure includes a pixel circuit substrate including a photosensitive region and a readout circuit region. A pixel array is disposed in the photosensitive region, and the readout circuit including a circuit interconnection terminal is disposed in the readout circuit region. The pixel circuit substrate includes a first surface and a second surface that are oppositely disposed. The packaging structure also includes a bonding layer disposed on the first surface. Moreover, the packaging structure includes a signal processing chip disposed above the first surface through the bonding layer. The signal processing chip includes a chip interconnection terminal. In addition, the packaging structure includes an interconnection structure electrically connected to the chip interconnection terminal and the circuit interconnection terminal. Further, the packaging structure includes a redistribution layer disposed on the second surface.
Public/Granted literature
- US20200273904A1 CMOS IMAGE SENSOR PACKAGING STRUCTURE AND FABRICATION METHOD THEREOF, AND CAMERA DEVICE Public/Granted day:2020-08-27
Information query
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