The techniques described herein relate to methods and apparatus for a resistive switching device. The resistive switching device includes a first electrode formed in a substrate. The resistive switching device also includes a plurality of layers formed above the first electrode, including a plurality of oxide layers, wherein one or more of the plurality of oxide layers comprise doped oxide layers, and one or more conductive spacers, wherein each pair of oxide layers of the plurality of oxide layers are separated by a conductive spacer of the one or more conductive spacers. The resistive switching device also includes a second electrode formed above the plurality of layers, such that the first electrode, the plurality of layers, and the second electrode are in series.