Invention Grant
- Patent Title: Method of preparing thin film transistor substrate
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Application No.: US16642949Application Date: 2019-05-20
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Publication No.: US11205667B2Publication Date: 2021-12-21
- Inventor: Kui Gong , Dezhi Xu , Wei Tian , Honggang Gu , Yuhu Zhang
- Applicant: HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Anhui; CN Beijing
- Assignee: HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Anhui; CN Beijing
- Agency: Calfee, Halter & Griswold LLP
- Priority: CN201810509994.8 20180524
- International Application: PCT/CN2019/087528 WO 20190520
- International Announcement: WO2019/223631 WO 20191128
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L29/00 ; H01L27/12 ; H01L29/45 ; H01L29/66 ; H01L29/786 ; G03F1/32 ; G03F7/20 ; G03F7/32

Abstract:
Disclosed is a method of preparing a thin film transistor substrate, a thin film transistor substrate, and a display apparatus. The method includes forming a conductive material layer, forming a hydrophobic insulation layer on the conductive material layer, forming a photoresist layer on the hydrophobic insulation layer, patterning the photoresist layer to form a photoresist pattern, removing a segment in the hydrophobic insulation layer that is not covered by the photoresist pattern to form a hydrophobic insulation pattern, and removing a segment in the conductive material layer that is not covered by the hydrophobic insulation pattern to form a conductive pattern.
Public/Granted literature
- US20200350344A1 METHOD OF PREPARING THIN FILM TRANSISTOR SUBSTRATE, THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY APPARATUS Public/Granted day:2020-11-05
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