Invention Grant
- Patent Title: Memory device and reference circuit thereof
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Application No.: US16715682Application Date: 2019-12-16
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Publication No.: US11211106B2Publication Date: 2021-12-28
- Inventor: Chia-Fu Lee , Yu-Der Chih , Hon-Jarn Lin , Yi-Chun Shih
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C11/16 ; G11C13/00 ; G11C7/06 ; G11C7/22

Abstract:
A device includes a first reference storage unit, a second reference storage unit, a first reference switch, and a second reference switch. The first reference switch includes a first terminal coupled to a first reference bit line, a second terminal coupled to the first reference storage unit, and a control terminal coupled a reference word line. The second reference switch includes a first terminal coupled to a second reference bit line, a second terminal coupled to the second reference storage unit, and a control terminal coupled the reference word line. The first reference storage unit is configured to receive a bit data through the first reference switch, and to generate a first signal having a first logic state.
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