Invention Grant
- Patent Title: Processing method and plasma processing apparatus
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Application No.: US16735858Application Date: 2020-01-07
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Publication No.: US11211229B2Publication Date: 2021-12-28
- Inventor: Sho Oikawa , Seiji Yokoyama , Taichi Okano , Shunichi Kawasaki
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JPJP2019-003759 20190111
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67 ; H01L21/3213 ; H01L21/3065 ; H01L21/66

Abstract:
A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, a first power supply configured to apply voltage to the outer peripheral member, and a memory storing information about a relationship between the voltage applied to the outer peripheral member and an adjustment amount of a process parameter. The method includes: applying voltage from the first power supply to the outer peripheral member; adjusting the process parameter based on the voltage applied to the outer peripheral member, by referring to the information stored in the memory; and performing a plasma process under a process condition including the adjusted process parameter.
Public/Granted literature
- US20200227241A1 PROCESSING METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2020-07-16
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