A method for DRIE matched release and/or the mitigation of photo resist pooling, comprising: depositing a first mask layer over a first surface of a silicon substrate; exposing a first portion and second portion of the first mask layer to a first etch process, wherein the exposing forms a first exposed layer; depositing a second mask layer over the first mask layer; exposing a third portion of the second mask layer to a second etch process, wherein the exposing forms a second exposed mask layer, and wherein the third portion overlaps the first portion of the first mask layer; developing the second mask layer and etching the third portion of the second mask layer and developing the first portion of the first mask layer; etching the first portion of the first mask layer to a first depth; and developing the first mask layer to reveal exposed portions of the first mask layer and etching the second portion of the silicon substrate to a second depth.