Invention Grant
- Patent Title: Semiconductor device including a passivation structure and manufacturing method
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Application No.: US16701790Application Date: 2019-12-03
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Publication No.: US11211303B2Publication Date: 2021-12-28
- Inventor: Jens Peter Konrath , Jochen Hilsenbeck , Dethard Peters , Paul Salmen , Tobias Schmidutz , Vice Sodan , Christian Stahlhut , Juergen Steinbrenner , Bernd Zippelius
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102018131153.2 20181206,DE102019131238.8 20191119
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L23/31 ; H01L29/06 ; H01L29/78 ; H01L29/739 ; H01L29/861 ; H01L23/29 ; H01L29/16

Abstract:
An embodiment of a semiconductor device includes a semiconductor body having a first main surface. The semiconductor body includes an active device area and an edge termination area at least partly surrounding the active device area. The semiconductor device further includes a contact electrode on the first main surface and electrically connected to the active device area. The semiconductor device further includes a passivation structure on the edge termination area and laterally extending into the active device area. The semiconductor device further includes an encapsulation structure on the passivation structure and covering a first edge of the passivation structure above the contact electrode.
Public/Granted literature
- US20200185297A1 SEMICONDUCTOR DEVICE INCLUDING A PASSIVATION STRUCTURE AND MANUFACTURING METHOD Public/Granted day:2020-06-11
Information query
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