Invention Grant
- Patent Title: Semiconductor device including a plurality of bonding pads
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Application No.: US16910225Application Date: 2020-06-24
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Publication No.: US11211349B2Publication Date: 2021-12-28
- Inventor: Seiya Isozaki , Tatsuya Kobayashi , Kota Jinno
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2019-151900 20190822
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/66 ; H01L23/31 ; H01L23/495 ; H01L21/48 ; H01L21/78 ; H01L21/56

Abstract:
A semiconductor device comprising: bonding pads formed in the first wiring layer; and first wirings and a second wiring formed in a second wiring layer provided one layer below the first wiring layer. Here, a power supply potential and a reference potential are to be supplied to each first wiring and the second wiring, respectively. Also, in transparent plan view, each of the first wirings is arranged next to each other, and is arranged at a first position of the second wiring layer, that is overlapped with the bonding region of the first bonding pad. Also, in transparent plan view, the second wiring is arranged at a second position of the second wiring layer, that is overlapped with a first region located between the first bonding pad and the second bonding pad. Further, a width of each first wiring is less than a width of the second wiring.
Public/Granted literature
- US20210057361A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-02-25
Information query
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