Invention Grant
- Patent Title: Methods and apparatuses including a boundary of a well beneath an active area of a tap
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Application No.: US16895927Application Date: 2020-06-08
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Publication No.: US11211382B2Publication Date: 2021-12-28
- Inventor: Michael Smith
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L21/761
- IPC: H01L21/761 ; H01L21/74 ; H01L27/092 ; H01L21/8238 ; H01L21/3105 ; H01L21/3065 ; H01L21/266 ; H01L21/223 ; H01L21/265 ; H01L21/762 ; H01L21/02
Abstract:
Apparatuses and methods are disclosed. One such apparatus includes a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity. A boundary of the well has an edge that is substantially beneath an edge of an active area of a tap to the well.
Public/Granted literature
- US20210028171A1 METHODS AND APPARATUSES INCLUDING A BOUNDARY OF A WELL BENEATH AN ACTIVE AREA OF A TAP Public/Granted day:2021-01-28
Information query
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