Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US16452688Application Date: 2019-06-26
-
Publication No.: US11211449B2Publication Date: 2021-12-28
- Inventor: Manabu Yoshino
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2018-247101 20181228
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A semiconductor device wherein a high-side circuit region, a low-side circuit region, and a high-voltage MOS that transmits a signal between the high-side circuit region and the low-side circuit region are provided on one semiconductor substrate, includes: a high-voltage isolation region isolating the high-side circuit region and the low-side circuit region from each other; a trench isolation isolating the high-voltage MOS and the high-voltage isolation region from each other; an N-type diffusion layer provided on an upper surface of the semiconductor substrate in the high-side circuit region and the high-voltage isolation region; and an N-type region provided on both sides of the trench isolation and having an impurity concentration lower than an impurity concentration of the N-type diffusion layer.
Public/Granted literature
- US20200212171A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-07-02
Information query
IPC分类: