Invention Grant
- Patent Title: 2D crystal hetero-structures and manufacturing methods thereof
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Application No.: US17027237Application Date: 2020-09-21
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Publication No.: US11211460B2Publication Date: 2021-12-28
- Inventor: Shih-Yen Lin , Si-Chen Lee , Samuel C. Pan , Kuan-Chao Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , NATIONAL TAIWAN UNIVERSITY
- Applicant Address: TW Hsinchu; TW Taipei
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Hsinchu; TW Taipei
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/24
- IPC: H01L29/24 ; H01L29/78 ; H01L21/02 ; H01L29/66 ; H01L31/032 ; H01L29/15 ; H01L31/0352 ; H01L29/778 ; H01L29/10 ; H01L29/786 ; H01L29/423 ; H01L31/109 ; H01L21/20 ; H01L21/683
Abstract:
A method of fabricating a semiconductor device having two dimensional (2D) lateral hetero-structures includes forming alternating regions of a first metal dichalcogenide film and a second metal dichalcogenide film extending along a surface of a first substrate. The first metal dichalcogenide and the second metal dichalcogenide films are different metal dichalcogenides. Each second metal dichalcogenide film region is bordered on opposing lateral sides by a region of the first metal dichalcogenide film, as seen in cross-sectional view.
Public/Granted literature
- US20210005719A1 2D CRYSTAL HETERO-STRUCTURES AND MANUFACTURING METHODS THEREOF Public/Granted day:2021-01-07
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