A method for forming a semiconductor device includes forming a fin over a substrate, forming an isolation region adjacent the fin, forming a dummy gate structure over the fin, recessing the fin adjacent the dummy gate structure to form a first recess using a first etching process, reshaping the first recess to form a reshaped first recess using a second etching process, wherein the second etching process etches upper portions of the fin adjacent the top of the recess more than the second etching process etches lower portions of the fin adjacent the bottom of the recess, and epitaxially growing a source/drain region in the reshaped first recess. Reshaping the first recess includes performing an oxide etch process, wherein the oxide etch process forms a porous material layer within the recess.