An AND-gate device having a structure arms, a channel from a first arm and a second arm extends to a channel of a third arm. When a current from a first voltage flowing from a first electrode of the first arm to a second electrode of the second arm, a flow of electrons is generated that flows through the third arm channel from the channel of the first and second arms to the third arm channel. At least two input structures are positioned in series in the third arm. Each input structure includes a fin structure having a gate controlled by an individual voltage applied to an electrode which induces an electric-field structure that shifts by an amount of the voltage. The controllable gate opening changes a depletion width, causing an amount of flow of ballistic electrons to pass through the channel. A sensor detects the ballistic electrons.