Sub-lithographic structures configured for selective placement of carbon nanotubes and methods of fabricating the same generally includes alternating conformal first and second layers provided on a topographical pattern formed in a dielectric layer. The conformal layers can be deposited by atomic layer deposition or chemical vapor deposition at thicknesses less than 5 nanometers. A planarized surface of the alternating conformal first and second layers provides an alternating pattern of exposed surfaces corresponding to the first and second layer, wherein a width of at least a portion of the exposed surfaces is substantially equal to the thickness of the corresponding first and second layers. The first layer is configured to provide an affinity for carbon nanotubes and the second layer does not have an affinity such that the carbon nanotubes can be selectively placed onto the exposed surfaces of the alternating pattern corresponding to the first layer.