Invention Grant
- Patent Title: Semiconductor optical integrated device
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Application No.: US16614345Application Date: 2017-10-03
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Publication No.: US11211768B2Publication Date: 2021-12-28
- Inventor: Keisuke Matsumoto , Yoshimichi Morita
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2017/035920 WO 20171003
- International Announcement: WO2019/069359 WO 20190411
- Main IPC: H01S5/026
- IPC: H01S5/026 ; G02B6/12 ; H01L31/12

Abstract:
A semiconductor optical integrated device according to the present invention includes a conductive substrate, a laser provided to the conductive substrate, a semi-insulating semiconductor layer provided on the conductive substrate, a photodiode provided on the semi-insulating semiconductor layer and a waveguide that is provided on the conductive substrate and guides output light of the laser to the photodiode, wherein an anode of the photodiode and a cathode of the photodiode are drawn from an upper surface side of the photodiode, and the waveguide and the photodiode are separated from each other by the semi-insulating semiconductor layer.
Public/Granted literature
- US20200274318A1 SEMICONDUCTOR OPTICAL INTEGRATED DEVICE Public/Granted day:2020-08-27
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