Operating a bipolar transistor having an insulated gate electrode
Abstract:
A method for operating an IGBT includes determining a maximum stationary reverse bias required for operation of the IGBT, determining a first removal charge, the removal of which at the gate of the IGBT causes an electric field strength that enables the IGBT to accept the maximum stationary reverse bias during stationary blocking, determining a second removal charge, the removal of which at the gate causes an electric field strength that leads to a dynamic avalanche, and, when the IGBT is switched off, removing from the gate during a charge removal duration a removal charge that is greater than the first removal charge and smaller than the second removal charge.
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