- Patent Title: Operating a bipolar transistor having an insulated gate electrode
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Application No.: US17272118Application Date: 2019-08-20
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Publication No.: US11211923B2Publication Date: 2021-12-28
- Inventor: Hans-Günther Eckel , Jan Fuhrmann , Felix Kayser , Quang Tien Tran
- Applicant: Siemens Aktiengesellschaft
- Applicant Address: DE Munich
- Assignee: Siemens Aktiengesellschaft
- Current Assignee: Siemens Aktiengesellschaft
- Current Assignee Address: DE Munich
- Agency: Henry M. Feiereisen LLC
- Priority: EP18191128 20180828
- International Application: PCT/EP2019/072200 WO 20190820
- International Announcement: WO2020/043540 WO 20200305
- Main IPC: H03K17/56
- IPC: H03K17/56 ; H03K17/0812

Abstract:
A method for operating an IGBT includes determining a maximum stationary reverse bias required for operation of the IGBT, determining a first removal charge, the removal of which at the gate of the IGBT causes an electric field strength that enables the IGBT to accept the maximum stationary reverse bias during stationary blocking, determining a second removal charge, the removal of which at the gate causes an electric field strength that leads to a dynamic avalanche, and, when the IGBT is switched off, removing from the gate during a charge removal duration a removal charge that is greater than the first removal charge and smaller than the second removal charge.
Public/Granted literature
- US20210313978A1 OPERATING A BIPOLAR TRANSISTOR HAVING AN INSULATED GATE ELECTRODE Public/Granted day:2021-10-07
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