Invention Grant
- Patent Title: Polycrystalline cubic boron nitride and method for manufacturing the same
-
Application No.: US17052855Application Date: 2020-02-27
-
Publication No.: US11214522B2Publication Date: 2022-01-04
- Inventor: Michiko Matsukawa , Satoru Kukino , Taisuke Higashi , Machiko Abe
- Applicant: SUMITOMO ELECTRIC HARDMETAL CORP.
- Applicant Address: JP Itami
- Assignee: SUMITOMO ELECTRIC HARDMETAL CORP.
- Current Assignee: SUMITOMO ELECTRIC HARDMETAL CORP.
- Current Assignee Address: JP Itami
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JPJP2019-036262 20190228,WOPCT/JP2020/001437 20200117
- International Application: PCT/JP2020/008151 WO 20200227
- International Announcement: WO2020/175644 WO 20200903
- Main IPC: C04B35/5831
- IPC: C04B35/5831 ; B23B27/18
Abstract:
A polycrystalline cubic boron nitride comprising 96% by volume or more of cubic boron nitride, wherein the cubic boron nitride has a dislocation density of more than 8×1015/m2, the polycrystalline cubic boron nitride comprises a plurality of crystal grains, and the plurality of crystal grains have a median diameter d50 of an equivalent circle diameter of less than 100 nm.
Public/Granted literature
- US20210238100A1 POLYCRYSTALLINE CUBIC BORON NITRIDE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2021-08-05
Information query
IPC分类:
