Invention Grant
- Patent Title: Chemical vapor deposition apparatus and blocker plate
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Application No.: US16455172Application Date: 2019-06-27
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Publication No.: US11214868B2Publication Date: 2022-01-04
- Inventor: Huan-Chieh Chen , Chao-Chun Wang , Chih-Yu Wu , Keith Kuang-Kuo Koai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: C23C16/40
- IPC: C23C16/40 ; C23C16/455

Abstract:
The present disclosure provides a blocker plate, including a plate body having a plurality of through holes, a first zone from a center to a first radius of the plate body, having a first conductance, a second zone from the first radius to a second radius of the plate body, having a second conductance, a third zone from the second radius to a third radius of the plate body, having a third conductance, wherein the first radius is smaller than the second radius, the second radius is smaller than the third radius, and the second conductance is greater than the first conductance. A chemical vapor deposition (CVD) apparatus including the blocker plate is also disclosed.
Information query
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