Invention Grant
- Patent Title: Residual layer thickness compensation in nano-fabrication by modified drop pattern
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Application No.: US16670497Application Date: 2019-10-31
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Publication No.: US11215921B2Publication Date: 2022-01-04
- Inventor: Ecron D. Thompson , Craig William Cone , Logan L. Simpson , Wei Zhang , James W. Irving
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Agency: Canon U.S.A., Inc., IP Division
- Main IPC: G03F7/00
- IPC: G03F7/00 ; H01L21/027

Abstract:
A fabrication method comprises selecting an initial drop pattern defining a position of drops of a formable material, the initial drop pattern comprising a grid pattern of drops, designating the drops of the grid pattern to be dispensed by a first series of nozzles of a dispenser based on a spacing between drops in the Y-dimension; generating a modified drop pattern by shifting the grid pattern in a first direction along the Y-dimension, wherein a shift distance is selected such that the drops of the shifted grid pattern are designated to be dispensed from a second series of nozzles of the dispenser; dispensing the plurality of drops according to the modified drop pattern onto a substrate; during the dispensing of the drops, shifting a position of the stage or dispenser along the Y-dimension opposite to the first direction by an amount equal to the shift distance.
Public/Granted literature
- US20210132491A1 Residual Layer Thickness Compensation in Nano-Fabrication Public/Granted day:2021-05-06
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