Invention Grant
- Patent Title: Three-dimensional neuromorphic device including switching element and resistive element
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Application No.: US16942928Application Date: 2020-07-30
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Publication No.: US11217302B2Publication Date: 2022-01-04
- Inventor: Kwangjin Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2019-0166754 20191213
- Main IPC: G11C11/54
- IPC: G11C11/54 ; G06N3/063 ; G11C13/00

Abstract:
A neuromorphic device, including a controller configured to generate ternary data by converting each bit of binary data into a ternary bit; and a memory device configured to store the ternary data, wherein the memory device includes: a first memory cell array including first memory cells formed between lower word lines and bit lines, wherein a first memory cell of the first memory cells includes a first switching element and a first resistive element; and a second memory cell array including second memory cells formed between upper word lines and the bit lines, wherein a second memory cell of the second memory cells includes a second switching element and a second resistive element, and wherein each bit of the ternary data is identified by a combination of a data bit stored in the first memory cells and a mask bit stored in the second memory cells.
Public/Granted literature
- US20210183438A1 THREE-DIMENSIONAL NEUROMORPHIC DEVICE INCLUDING SWITCHING ELEMENT AND RESISTIVE ELEMENT Public/Granted day:2021-06-17
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