The present disclosure relates to a method of programming resistive memory cells of a resistive memory, the method comprising: applying, by a programming circuit based on a first target resistive state, an initial resistance modification to a first cell of the resistive memory to change its resistance from an initial resistive state to a first new resistance; comparing, by the programming circuit, the first new resistance of the first cell with a resistance range of the first target resistive state and with a target resistance range associated with the first target resistive state; and if it is determined that the first new resistance is outside the resistance range of the target resistive state and inside the target resistance range, applying by the programming circuit one or more further resistance modifications to the first cell to increase or decrease its resistance.