Invention Grant
- Patent Title: Method for forming semiconductor device structure with fine line pitch and fine end-to-end space
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Application No.: US16895525Application Date: 2020-06-08
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Publication No.: US11217458B2Publication Date: 2022-01-04
- Inventor: Hung-Hao Chen , Yu-Shu Chen , Yu-Cheng Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/311 ; H01L21/027 ; H01L21/3213 ; H01L21/768 ; H01L23/532
Abstract:
A method for forming a semiconductor device structure is provided. The method includes providing a substrate and forming a bottom layer, a middle layer, and a top layer on the substrate. The method also includes patterning the top layer to form a patterned top layer and patterning the middle layer by a patterning process including a plasma process to form a patterned middle layer. The plasma process is performed by using a mixed gas including hydrogen gas (H2). The method further includes controlling a flow rate of the hydrogen gas (H2) to improve an etching selectivity of the middle layer to the top layer, and the patterned middle layer includes a first portion and a second portion parallel to the first portion, and a pitch is between the first portion and the second portion.
Public/Granted literature
- US20200303204A1 Method for Forming Semiconductor Device Structure with Fine Line Pitch and Fine End-To-End Space Public/Granted day:2020-09-24
Information query
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