The present disclosure provides a manufacturing method of a complementary metal-oxide-semiconductor (CMOS) inverter includes annealing a substrate printed with an oxide ink to obtain a first active layer, printing a carbon tube ink between a first source and the first drain to form a second active layer for obtaining a first thin-film transistor (TFT), forming a second source and a second drain on two sides of the first active layer to obtain a second TFT, and forming wires between the first TFT and the second TFT.