A method includes providing a semiconductor substrate having a main surface and a rear surface vertically spaced apart from the main surface, forming a switching device in an active region of the semiconductor substrate, the switching device having electrically conductive gate and field electrodes, forming an intermetal dielectric layer on the main surface over the active region and an inactive region that is laterally spaced apart from the active region, forming a source pad in the first metallization layer over the active region, forming a resistor trench in the inactive region, the resistor trench having a resistance section that is disposed below the main surface, and forming an electrical connection between the source pad and the field electrode that comprises the resistor. The resistor forms an exclusive current path between the source pad and the field electrode.