A nonvolatile memory device according to an embodiment of the present disclosure includes a substrate having a channel layer, a first tunneling layer disposed on the channel layer, a second tunneling layer disposed on the first tunneling layer, a third tunneling layer disposed on the second tunneling layer, a charge trap layer disposed on the third tunneling layer, a charge barrier layer disposed on the charge trap layer, and a gate electrode layer disposed on the charge barrier layer. The first tunneling layer includes a first insulative material. The second tunneling layer includes a second insulative material. The third tunneling layer includes a second insulative material. The resistance switching material is a material whose electric resistance varies reversibly between a high resistance state and a low resistance state depending on a magnitude of an applied electric field.