Invention Grant
- Patent Title: Solid-state image sensor for phase difference detection, method of manufacturing the same, and electronic device
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Application No.: US16516871Application Date: 2019-07-19
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Publication No.: US11217620B2Publication Date: 2022-01-04
- Inventor: Yukio Kaneda
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JP2014-225190 20141105
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/369 ; H04N9/04 ; H01L27/30

Abstract:
A more preferable pixel for detecting a focal point may be formed by using a photoelectric converting film. A solid-state image sensor includes a first pixel including a photoelectric converting unit formed of a photoelectric converting film and first and second electrodes which interpose the same from above and below in which at least one of the first and second electrodes is a separated electrode separated for each pixel, and a second pixel including the photoelectric converting unit in which the separated electrode is formed to have a planar size smaller than that of the first pixel and a third electrode extending at least to a boundary of the pixel is formed in a region which is vacant due to a smaller planar size. The present disclosure is applicable to the solid-state image sensor and the like, for example.
Public/Granted literature
Information query
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