The disclosure relates to a semiconductor device, including a semiconductor substrate of a first conductivity type and a semiconductor layer of a second conductivity type on the semiconductor substrate, the second conductivity type being different than the first conductivity type. The semiconductor device also includes an isolation structure electrically isolating a first region of the semiconductor layer from a second region of the semiconductor layer. A shallow trench isolation structure vertically extends from a surface of the semiconductor layer into the first region of the semiconductor layer. An electrical resistor is formed on the shallow trench isolation structure.